Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction

By S. Nakagomi, Toshihiro Momo, Syuhei Takahashi, Y. Kokubun. 2013

218 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment

View Paper: https://www.semanticscholar.org/paper/f7cb94d515f8fecb022aa54ead3734376a1a2359

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In Electronic, Optical and Magnetic Materials

1. Uttam Singisetti

In Materials Chemistry

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Citations in the corpus

• Ab Initio Velocity-Field Curves in Monoclinic \(\beta\)-Ga\textsubscript{2}O\textsubscript{3}} (2016, background): “Experimentally demonstrated high breakdown voltage devices 1-5 makes it an attractive material for next generation power electronics in addition to deep UV optoelectronic applications 6-7 .”
• Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications (2020, background): “The growth of polymorphs Ga2O3 films has been broadly exploited based on available heteroor homosubstrates, such as Si [75, 76], sapphire [77–82], AlN [83, 84], SiC [61, 85] and Ga2O3 [86, 87].”