C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

By H. Kawarada, H. Tsuboi, T. Naruo, T. Yamada, D. Xu, Akira Daicho, Tatsuya Saito, A. Hiraiwa. 2014

175 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/f6b7b1872ba9ae1235bf271f7a714bc75ad012ea

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. Y. Kitabayashi
2. T. Kudo
3. H. Tsuboi
4. Tetsuya Yamada
5. Dechen Xu
6. M. Shibata
7. D. Matsumura
8. H. Kawarada

Citations in the corpus

• Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage (2017, background): “The 2DHG formed on C-H diamond surface has some useful aspects, such as its, high carrier density of ∼ 1013 cm−2 [1], constant current density over a wide temperature range [2], ease of fabrication and ubiquitous [3]: the surface conductivity is induced on every orientation so C-H diamond can fabric”