Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling
By Daniel Christopher Worledge, P. Trouilloud. 2003
226 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/f5d55f38d9c97f30d31ff114603de7cd1e4ceb1a
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Tunnel Magnetoresistance Over 100% in MgO-Based Magnetic Tunnel Junction Films With Perpendicular Magnetic L1$_{0}$-FePt Electrodes (2008, methodology): “The TMR ratio of the unpatterned MTJ film was estimated using the CIPT method [16].”
- Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (2017, methodology): “Figure 11(a) shows the anisotropy fields for the out-of-plane magnetized first series of samples (Pt=CoFe==Mg=natural oxidation based) alongside the TMR for the second series of samples, as measured by the CIP-TMR technique (Worledge and Trouilloud, 2003).”