Transient enhanced diffusion of Boron in Si
By Suresh S. Jain, W. Schoenmaker, R. Lindsay, P. Stolk, S. Decoutere, Magnus Willander, H. Maes. 2002
224 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/f5950ff0d837d1d668ccf8278efd8b155430c8ef
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
- C. Machala
- R. Wise
- P. Chidambaram
- C. Bowen
- S. Chakravarthi
Citations in the corpus
- Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing (2006, background): “Hence, high-temperature diffusion results, especially with high biaxial and uniaxial strains, are difficult to interpret as dislocations significantly alter dopant diffusion [50].”