Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy
By K. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, Ke Yang, Keisuke L. I. Kobayashi, M. Hirano, Hideo Hosono. 2008
316 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/f4ef48e8339bd56cf31d194edb0bf184ebf45806
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Hideo Hosono
- T. Kamiya
- K. Nomura
- John F. Conley
- Jae Kyeong Jeong
- Jang Yeon Kwon
- Elvira Fortunato
- Pedro Barquinha
In Materials Chemistry
- Hideo Hosono
- T. Kamiya
- K. Nomura
- John F. Conley
- Jae Kyeong Jeong
- Jang Yeon Kwon
- Elvira Fortunato
- Pedro Barquinha
In Polymers and Plastics
Citations in the corpus
- Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping* (2009, methodology): “The origins are not clear yet, but it would be attributed to the different chemical composition as shown in Table I [56].”