Zr/oxidized diamond interface for high power Schottky diodes

By A. Traoré, P. Muret, Alexandre Fiori, D. Eon, E. Gheeraert, J. Pernot. 2014

149 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/f231b6710838b7f2bee2f46d2aa8959b2221ed36

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Giorgia Longobardi
2. Florin Udrea
3. Julien Pernot
4. Nicolas Rouger
5. Nicola Donato
6. Hitoshi Umezawa

In Materials Chemistry

1. Giorgia Longobardi
2. Florin Udrea
3. Julien Pernot
4. Nicolas Rouger
5. Nicola Donato
6. Hitoshi Umezawa

In Mechanics of Materials

1. Hitoshi Umezawa

Citations in the corpus

• Diamond power devices: state of the art, modelling, figures of merit and future perspective (2019, background): “7 MV cm−1 [21]) have been reported in the literature, but a significant non-uniformity in the material quality has resulted in discrepancies for the reported experiments.”
• Recent advances in diamond power semiconductor devices (2018, background): “Utilizing this treatment, high reverse blocking voltages of> 1 kV and high current densities of> 1 kA/cm(2) at 6 V have been realized for Zr SBD [23].”