Ferroelectricity in Ultrathin Perovskite Films

By D. Fong, G. Stephenson, S. Streiffer, J. Eastman, O. Auciello, P. Fuoss, C. Thompson. Science, 2004

999 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f06fc5c768ebbf03b8497c31cab0f89fb92b947a

How researchers see this paper

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In Electronic, Optical and Magnetic Materials

1. Ramamoorthy Ramesh
2. J. Scott
3. Manuel Bibes
4. Darrell Schlom
5. K. Rabe
6. G. Catalán
7. Long-qing Chen
8. M. Dawber

In Materials Chemistry

1. Ramamoorthy Ramesh
2. J. Scott
3. Takashi Taniguchi
4. Kenji Watanabe
5. K. Rabe
6. P. Jarillo-Herrero
7. Darrell Schlom
8. Long-qing Chen

Citations in the corpus

• Domain wall nanoelectronics (2012, background): “Although this does not completely get rid of the depolarization (locally, each individual domain still has a small stray field), the mechanism is effective enough to allow ferroelectricity to survive down to films of only a few unit cells thick (Streiffer et al., 2002; Fong et al., 2004).”
• Stacking-engineered ferroelectricity in bilayer boron nitride (2020, background): “Room-temperature ferroelectricity down to atomic thicknesses was, however, difficult to access due to the depolarization effect until the recent development of three series of materials: epitaxial perovskites (2, 3), HfO2-based ferroelectrics (4), and low-dimensional van der Waals (vdW) ferroelectri”