High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

By Wei Wu, S. Chang, Yanan Wang, Haibing Peng, Jiming Bao, S. Pei. 2013

247 citations recorded by the source corpus.

We report the electrical characteristics of field-effect transistors (FETs) with single-crystal molybdenum disulfide (MoS2) channels synthesized by chemical vapor deposition (CVD). For a bilayer MoS2 FET, the field-effect mobility is ∼17 cm2 V−1 s−1 and the on/off current ratio is ∼108, which are much higher than those of FETs based on CVD polycrystalline MoS2 films. By avoiding the detrimental effects of the grain boundaries and the contamination introduced by the transfer process, the quality of the CVD MoS2 atomic layers deposited directly on SiO2 is comparable to or better than the exfoliated MoS2 flakes. The result shows that CVD is a viable method to synthesize high quality MoS2 atomic layers.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/f06c12a062a64fce6ab902ae81078b7ba269f53b

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In Electrical and Electronic Engineering

1. Filippo Giubileo
2. A. Di Bartolomeo

In Materials Chemistry

1. Filippo Giubileo
2. Giuseppe Luongo
3. L. Iemmo
4. Tobias Foller
5. L. Genovese
6. M. Schleberger
7. A. Di Bartolomeo

Citations in the corpus

• Hysteresis in the transfer characteristics of MoS2 transistors (2017, background): “Indeed, MoS2 devices on SiO2/Si substrates with On/Off current ratio up to 10(8) have been reported [5-8].”
• Few-layer MoS2: a promising layered semiconductor. (2014, unknown): “real-life mobility has been the focus of multiple studies.(82,100,109,110,112,113,119,121,201,205,207) 211 High-κ”