Hall hole mobility in boron-doped homoepitaxial diamond

By J. Pernot, P. Volpe, F. Omnès, P. Muret, V. Mortet, K. Haenen, T. Teraji. 2010

141 citations recorded by the source corpus.

Subfields: Geophysics, Materials Chemistry, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/ef3048bc48a56fc2a25c8edbaf1e1e8719735660

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Citations in the corpus

• Surface transfer doping of diamond: A review (2021, background): “5 for temperatures between 300 and 350 K [36,37].”