Closed-Loop di/dt and dv/dt IGBT Gate Driver

By Y. Lobsiger, J. W. Kolar. 2015

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Junction Temperature Extraction Approach With Turn-Off Delay Time for High-Voltage High-Power IGBT Modules (2016, background): “ditional components are needed to convert dynamic dv/dt and di/dt to an observable signal, like RC circuitry or a PCB Rogowski coil, which affect IGBT switching characteristics [17],”
A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues (2020, background): “This active control of di/dt and dv/dt allows enhanced switching behavior of power devices by optimizing switching losses, reverse recovery current of the freewheeling diode, turn-off overvoltage, switching delay times, and electromagnetic interference (EMI) [61], [62].”
A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI (2018, background): “of current and voltage overshoot [4]–[7], [13], suppression of EMI generation without significantly affecting power loss [8], [9], [12]–[15], and optimization of power efficiency under constantly changing load conditions [7], [16].”
Automotive Traction Inverters: Current Status and Future Trends (2019, methodology): “tional passive circuits show limitations [31].”