Nature of doped a-Si:H / c-Si interface recombination

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Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells (2017, background): “However, performance limitations caused by the relatively high optical absorption of a-Si:H [2] and the highly recombining n/p doped layers [3] (which act as electron/hole selective contacts) have led to investigate novel heterojunction concepts between c-Si and dopant-free highly-transparent transi”
Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells (2013, unknown): “In order to reduce recombination at the doped a-Si:H/crystalline silicon interface [3], intrinsic a-Si:H buffer layers are inserted between the wafer and the doped layers [2].”
Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects (2018, background): “Especially in the case of p-type a-Si:H, the passivation quality can be easily damaged during annealing due to H effusion that is caused by Si–H bond breakage [49].”
Current Losses at the Front of Silicon Heterojunction Solar Cells (2012, background): “energy in an a-Si:H i-layer is lowered when a p-layer is deposited on it, since the Fermi energy EF in the i-layer is pulled away from mid gap [24].”