Current Losses at the Front of Silicon Heterojunction Solar Cells

By Z. Holman, A. Descoeudres, L. Barraud, F. Z. Fernandez, J. Seif, S. De Wolf, Christophe Ballif. IEEE Journal of Photovoltaics, 2012

488 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/77537cd9c12b5e668e0c8dcec6a5443f7957f62a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. S. De Wolf
2. Christophe Ballif
3. W. Kessels
4. Z. Holman
5. A. Cuevas
6. A. Descoeudres
7. Xinbo Yang
8. L. Black

In Materials Chemistry

1. S. De Wolf
2. Christophe Ballif
3. A. Cuevas
4. Z. Holman
5. W. Kessels
6. A. Descoeudres
7. Ali Javey
8. L. Barraud

Citations in the corpus

• Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells (2013, unknown): “6 and the large difference in efficiencies reflects improvements in layers of the solar cell besides the front TCO, including the a-Si:H layers [7,16].”
• Industrially feasible, dopant‐free, carrier‐selective contacts for high‐efficiency silicon solar cells (2017, background): “Compared with doped-silicon-layer-based CSCs that involve complex deposition conditions with toxic gases and may lead to undesired optical losses [21], these dopant-free CSCs, are easily deposited, potentially at low cost, by thermal evaporation, atomic layer deposition (ALD), spin-coating, brush pa”
• Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects (2018, background): “The same applies to the data for MoOx (x 3) [95], In2 O3 :H [149], [150], ZnO:Al [151], ZnO:H [152], ITO [151], IZO [153], poly-Si [154], and a-Si:H [46].”
• Efficient silicon solar cells with dopant-free asymmetric heterocontacts (2016, background): “Whilst this assumption has been found to be true for the doped a-Si:H layers, the less defective intrinsic a-Si:H layers can still contribute ~30% of their absorbed light to the solar cell current.(4) This suggests the benefits of the DASH approach in terms of reduced parasitic absorption percentage”
• >21% Efficient Silicon Heterojunction Solar Cells on n- and p-Type Wafers Compared (2013, background): “Since parasitic light absorption in the front stack of layers is of particular importance for heterojunction solar cells [12], the properties and thicknesses of the n- and p-doped a-Si:H lay-”