Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons

By H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Yoshihiro Kobayashi, H. Yamaguchi. 2007

303 citations recorded by the source corpus.

Low-energy electron microscopy (LEEM) was used to measure the reflectivity of low-energy electrons from graphitized $\mathrm{SiC}(0001)$. The reflectivity shows distinct quantized oscillations as a function of the electron energy and graphite thickness. Conduction bands in thin graphite films form discrete energy levels whose wave vectors are normal to the surface. Resonance of the incident electrons with these quantized conduction band states enhances electrons to transmit through the film into the $\mathrm{SiC}$ substrate, resulting in dips in the reflectivity. The dip positions are well explained using tight-binding and first-principles calculations. The graphite thickness distribution can be determined microscopically from LEEM reflectivity measurements.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Surfaces, Coatings and Films

View Paper: https://www.semanticscholar.org/paper/eb9ab29fc4011f61e2b0519dafd782af758ed2b4

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In Atomic and Molecular Physics, and Optics

1. A. Bostwick
2. K. Emtsev
3. T. Seyller
4. J. McChesney
5. Eli Rotenberg
6. K. Horn
7. T. Ohta
8. T. Iakimov

In Electrical and Electronic Engineering

1. A. Bostwick
2. Eli Rotenberg
3. T. Iakimov
4. T. Seyller

Citations in the corpus

• Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. (2009, background): “However, the large-scale structural quality is limited at present by the lack of continuity and uniformity of the grown fil”
• Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, background): “For example, the growth of epitaxial graphene on SiC(0001) in ultrahigh vacuum (UHV) yields graphene layers with low quality and small grains [39,88].”
• Evidence for graphene growth by C cluster attachment (2008, background): “, graphene, because of its novel and potentially useful electronic properties [5]–[9].”