Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide.
By B. Baugher, H. Churchill, Yafang Yang, P. Jarillo-Herrero. Nature Nanotechnology, 2013
1,448 citations recorded by the source corpus.
The p-n junction is the functional element of many electronic and optoelectronic devices, including diodes, bipolar transistors, photodetectors, light-emitting diodes and solar cells. In conventional p-n junctions, the adjacent p- and n-type regions of a semiconductor are formed by chemical doping. Ambipolar semiconductors, such as carbon nanotubes, nanowires and organic molecules, allow for p-n junctions to be configured and modified by electrostatic gating. This electrical control enables a single device to have multiple functionalities. Here, we report ambipolar monolayer WSe2 devices in which two local gates are used to define a p-n junction within the WSe2 sheet. With these electrically tunable p-n junctions, we demonstrate both p-n and n-p diodes with ideality factors better than 2. Under optical excitation, the diodes demonstrate a photodetection responsivity of 210 mA W(-1) and photovoltaic power generation with a peak external quantum efficiency of 0.2%, promising values for a nearly transparent monolayer material in a lateral device geometry. Finally, we demonstrate a light-emitting diode based on monolayer WSe2. These devices provide a building block for ultrathin, flexible and nearly transparent optoelectronic and electronic applications based on ambipolar dichalcogenide materials.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/96223dcc8dfa90fcd70163b36e78bf5dd7d6601b
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Materials Chemistry
Citations in the corpus
- Valley excitons in two-dimensional semiconductors (2015, background): “In lateral p-i-n junctions electrostatically formed in monolayer WSe2, electroluminescence has been observed when the electrons and holes are injected into the intrinsic region from the n- and p-doped regions respectively under the forward bias [39-41].”
- Black phosphorus-monolayer MoS2 van der Waals heterojunction p-n diode. (2014, background): “100 times higher than that reported for few-layer black phosphorus phototransistors and 26 times higher than that recently reported for WSe2 p n diodes.(19,35,36) The photovoltaic power generation in the diode reaches a peak external quantum efficiency of ∼0.”