The physics and chemistry of the Schottky barrier height
By R. T. Tung. 2014
1,242 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/e9bdc1d2b465973d8d2f21dc2ec8f28ec1c1847f
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
- A. Di Bartolomeo
- James Towfik Teherani
- Sekhar Babu Mitta
- Ankur Nipane
- D. Moran
- James C. Hone
- David A. MacDonald
- Isha Maini
In Electrical and Electronic Engineering
- James Towfik Teherani
- Sekhar Babu Mitta
- Ankur Nipane
- D. Moran
- James C. Hone
- David A. MacDonald
- Isha Maini
- Kevin G. Crawford
Citations in the corpus
- Surface transfer doping of diamond: A review (2021, methodology): “This model has been encapsulated succinctly by Tung in a rigorous energy-functional framework [239].”
- Electrical characterization of 2D materials-based field-effect transistors (2020, methodology): “The CNL for n-type can be estimated by the relation ϕCNL = χ+ b 1− S .”
- Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction (2015, background): “nd the formalism which will be later adapted to the GSJ. Exhaustive treatments of M/S contacts can be found in any semiconductor device textbook [33]-[37] or in extensive review articles as Ref. [38]-[39]. Schottky diodes are important electronic components, used in many applications such as solar c”