Role of surface diffusion in chemical beam epitaxy of InAs nanowires

By L. Jensen, M. Björk, S. Jeppesen, A. Persson, B. Ohlsson, Lars Samuelson. 2004

319 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/e8ea5471d23d9415687535016af722b8e955fc98

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Lars Samuelson
2. Magnus Borgström
3. J. Wallentin
4. Wei Dang Lu
5. Charles M. Lieber
6. Peidong Yang

In Biomedical Engineering

1. Magnus Borgström
2. J. Wallentin
3. Lars Samuelson
4. Wei Dang Lu
5. Ping Xie
6. K. Deppert
7. Lars-Erik Wernersson
8. Tomas Bryllert

In Electrical and Electronic Engineering

1. Magnus Borgström
2. Wei Dang Lu
3. Lars Samuelson
4. J. Wallentin
5. Ping Xie
6. K. Deppert
7. Lars-Erik Wernersson
8. Charles M. Lieber

Citations in the corpus

• Vertical high-mobility wrap-gated InAs nanowire transistor (2006, background): “By benefiting from the recent progress in the growth of nanowires at predefined locations [7], and by introducing a novel process scheme, we are able to demonstrate nanowire FETs that show good performance and allow for mass fabrication.”
• Nanowire Transistor Performance Limits and Applications (2008, background): “surfaces in the case of InAs nanowires [38].”
• Nanowires With Promise for Photovoltaics (2011, background): “The NWs are grown at low temperatures (400–500 ◦ C) relative to thin films (600–700 ◦ C). The NW growth dynamics are complex and are influenced by the metal seed particle, the substrate material [43], growth temperature [44], [45], precursor supersaturation [46], [47], and NW pitch and diameter [48]”