Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory

By K. Florent, M. Pešić, A. Subirats, K. Banerjee, Simone Lavizzari, A. Arreghini, L. di Piazza, G. Potoms, F. Sebaai, S. Mcmitchell and 3 more. International Electron Devices Meeting, 2018

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A vertical ferroelectric HfO2 field effect transistor based on 3-D macaroni NAND architecture is reported for the first time. Up to 2 V memory window was obtained after the application of 100 ns program/erase pulses. Flash-like endurance of 104 cycles is reported and first reliability assessments were performed.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/e6dbcbe5a37b7d72beac6d22f936c03f8e283c7c