Passively mode-locked diode-pumped surface-emitting semiconductor laser
By R. Häring, R. Paschotta, F. Morier-Genoud, U. Keller, J. S. Roberts, S. Hoogland, S. Dhanjal, A. Tropper. IEEE Photonics Technology Letters, 2000
213 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/e5edf7a3ff8373b096e247e6e4433ffb20caeac4
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- High-power passively mode-locked semiconductor lasers (2002, unknown): “We have recently demonstrated for the first time [9], [10] that such lasers can be mode-locked with a semiconductor saturable absorber mirror”
- Recent developments in compact ultrafast lasers (2003, background): “Optically pumped vertical–external cavity surface-emitting lasers (VECSELs) have been passively modelocked with an intracavity saturable absorbe”
- 50-GHz passively mode-locked surface-emitting semiconductor laser with 100-mW average output power (2006, methodology): “After the first demonstration of passive mode locking of a VECSEL in 2000 [2] using a semiconductor saturable absorber mirror (SESAM [3], [4]), a period of rapid progress followed during which the great flexibility in design and fabrication of the semiconductor gain structure and absorber was exploi”