High-power passively mode-locked semiconductor lasers
By R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, Ursula Keller. 2002
147 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/5028a07528a0158e66046dc2e6e69d4184f3bb8c
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Recent developments in compact ultrafast lasers (2003, background): “Average power scaling is not limited, and 950 mW of average power in 15 ps pulses with a 6 GHz repetition rat”
- 50-GHz passively mode-locked surface-emitting semiconductor laser with 100-mW average output power (2006, methodology): “The design and processing of our gain structures has been described in detail in [12].”