Low-Dislocation-Density GaN from a Single Growth on a Textured Substrate

By C. Ashby, C. C. Mitchell, Jung Han, N. Missert, P. Provencio, D. Follstaedt, G. Peake, L. Griego. 2000

157 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/e4f0fc24d027ded9364c865560c10b99fc505d12

Citations in the corpus

• Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth Mode (2009, unknown): “taxy [9], and cantilever epitaxy [10].”