Field-Effect Transistors Based on Single Semiconducting Oxide Nanobelts

By M. Arnold, Phaedon Avouris, Z. Pan, Zhong Lin Wang. 2003

989 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/e43a29224eaa9a059d0f03264c342215c4c41362

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Wei Dang Lu
2. Ping Xie
3. W. Park
4. G. Yi
5. Yang-Kyu Choi
6. Xing-Jiu Huang
7. Chunrui Wang
8. A. Zak

In Electrical and Electronic Engineering

1. Wei Dang Lu
2. Ping Xie
3. M. Batzill
4. Yang-Kyu Choi
5. W. Park
6. Xing-Jiu Huang
7. G. Yi
8. Chunrui Wang

In Materials Chemistry

1. M. Batzill
2. M. Abrishami
3. Chunrui Wang
4. Wei Dang Lu
5. W. Park
6. Ping Xie
7. G. Yi
8. A. Zak

Citations in the corpus

• Chemical sensors based on nanostructured materials (2007, background): “The ability of SnO2 eld-effect transistors to act as oxygen sensors is demonstrated y Wang and co-workers [45].”
• A Comprehensive Review of One-Dimensional Metal-Oxide Nanostructure Photodetectors (2009, neutral): “5 — — — — — [43] NW Resistor 365 nm 2 2 μA 15 μA — 45 s 55 s [44] NF/NWs Resistor 115-400 nm; 150 W 10 7.”