A Comprehensive Review of One-Dimensional Metal-Oxide Nanostructure Photodetectors

By Teng Zhai, Xiaosheng Fang, Meiyong Liao, Xijin Xu, Haibo Zeng, B. Yoshio, Dmitri Golberg. Italian National Conference on Sensors, 2009

522 citations recorded by the source corpus.

One-dimensional (1D) metal-oxide nanostructures are ideal systems for exploring a large number of novel phenomena at the nanoscale and investigating size and dimensionality dependence of nanostructure properties for potential applications. The construction and integration of photodetectors or optical switches based on such nanostructures with tailored geometries have rapidly advanced in recent years. Active 1D nanostructure photodetector elements can be configured either as resistors whose conductions are altered by a charge-transfer process or as field-effect transistors (FET) whose properties can be controlled by applying appropriate potentials onto the gates. Functionalizing the structure surfaces offers another avenue for expanding the sensor capabilities. This article provides a comprehensive review on the state-of-the-art research activities in the photodetector field. It mainly focuses on the metal oxide 1D nanostructures such as ZnO, SnO2, Cu2O, Ga2O3, Fe2O3, In2O3, CdO, CeO2, and their photoresponses. The review begins with a survey of quasi 1D metal-oxide semiconductor nanostructures and the photodetector principle, then shows the recent progresses on several kinds of important metal-oxide nanostructures and their photoresponses and briefly presents some additional prospective metal-oxide 1D nanomaterials. Finally, the review is concluded with some perspectives and outlook on the future developments in this area.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/05e06e04f63512a9a8dffa4cb9c82e9930472c16

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

  1. Teng Zhai
  2. Xiaosheng Fang
  3. Dmitri Golberg
  4. U. Gautam
  5. Liang Li
  6. Yoshio Bando
  7. Limin Wu
  8. Jae‐Joon Lee

In Electronic, Optical and Magnetic Materials

  1. Xiaosheng Fang
  2. Teng Zhai
  3. Dmitri Golberg
  4. Yoshio Bando
  5. Hao Lu
  6. Limin Wu
  7. Kewei Liu
  8. Liang Li

In Materials Chemistry

  1. Teng Zhai
  2. Xiaosheng Fang
  3. Dmitri Golberg
  4. Yoshio Bando
  5. Liang Li
  6. U. Gautam
  7. Limin Wu
  8. D. Fawcett

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