High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

By K. Tadatomo, H. Okagawa, Y. Ohuchi, Takashi Tsunekawa, Y. Imada, Munehiro Kato, T. Taguchi. 2001

360 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/e3ee7463104bcd9d956f595fde79bba2d1c0b20e

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In Electronic, Optical and Magnetic Materials

1. Shoou Jinn Chang
2. T. Wen

Citations in the corpus

• 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes (2002, background): “Although these blue/green LEDs are already commercially available, it is still difficult to achieve LEDs emitting at even shorter wavelength regions, such as ultraviolet (UV) region [3]‐[ 8 ].”
• Photonic crystal LEDs – designing light extraction (2009, background): “Besides surface roughening there are some additional solutions for scattering the light internally, like patterned substrates [45] or buried microreflectors [44].”
• Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates (2006, result): “comparable improvement of LED performance was demonstrated compared to the ELOG technique [ 6 ]‐[10].”