Leakage current analysis of diamond Schottky barrier diodes operated at high temperature

By Hitoshi Umezawa, Takeyasu Saito, N. Tokuda, M. Ogura, S. Ri, H. Yoshikawa, S. Shikata. 2007

136 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/e39f3f6b67d2ac9a09ddac4c6dccb73e0215fc6b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Giorgia Longobardi
2. Florin Udrea
3. Julien Pernot
4. Nicolas Rouger
5. Nicola Donato
6. Hitoshi Umezawa

In Materials Chemistry

1. Giorgia Longobardi
2. Florin Udrea
3. Julien Pernot
4. Nicolas Rouger
5. Nicola Donato
6. Hitoshi Umezawa

In Mechanics of Materials

1. Hitoshi Umezawa

Citations in the corpus

• Recent advances in diamond power semiconductor devices (2018, background): “This model agrees well with the measured leakage current, even at elevated temperatures [18,22,24,30].”
• Diamond power devices: state of the art, modelling, figures of merit and future perspective (2019, methodology): “Ramp field plate oxides have been suggested to be one of the most effective ways to reduce the peak electric field in SBDs (figure 15(b)).”