Conduction at domain walls in oxide multiferroics.

By J. Seidel, L. Martin, Q. He, Q. Zhan, Y. Chu, A. Rother, M. Hawkridge, P. Maksymovych, P. Yu, M. Gajek and 9 more. Nature Materials, 2009

1,302 citations recorded by the source corpus.

Domain walls may play an important role in future electronic devices, given their small size as well as the fact that their location can be controlled. Here, we report the observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO(3). The origin and nature of the observed conductivity are probed using a combination of conductive atomic force microscopy, high-resolution transmission electron microscopy and first-principles density functional computations. Our analyses indicate that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall. Additionally, we demonstrate the potential for device applications of such conducting nanoscale features.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/e36a692f2e52e43e38196362e4659ccc42b8f1db

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. J. Scott
2. Ramamoorthy Ramesh
3. G. Catalán
4. Manuel Bibes
5. A. Tagantsev
6. Vincent Garcia
7. J. Seidel
8. P. Zubko

In Materials Chemistry

1. J. Scott
2. Ramamoorthy Ramesh
3. Manuel Bibes
4. G. Catalán
5. Vincent Garcia
6. A. Tagantsev
7. J. Seidel
8. P. Zubko

Citations in the corpus

• Strain-based scanning probe microscopies for functional materials, biological structures, and electrochemical systems (2015, background): “[58], Macmillan Publishers Ltd: Nature Materials 2009;8:229e34, copyright (2009).”
• Ferroelectric tunnel junctions for information storage and processing (2014, background): “7) tunnel junctions in various intermediate states and the parallel resistance model suggests a negligible (if any) contribution from the ferroelectric domain walls in the tunnel resistance 51,52 .”