High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs

By H. Yoda, T. Kishi, T. Nagase, M. Yoshikawa, K. Nishiyama, E. Kitagawa, T. Daibou, M. Amano, N. Shimomura, Shigeki Takahashi and 16 more. 2010

164 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/e2e37bfa2bdc08af30d28f2dec29f5f988ec22e7

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Alexander Driskill-Smith
2. Vladimir Nikitin
3. Eugene Chen
4. Adrian Ong
5. Steven Watts
6. Alexey Khvalkovskiy
7. W. H. Butler
8. Mohamad Krounbi

In Electrical and Electronic Engineering

1. A. Slavin
2. V. Tiberkevich

Citations in the corpus

• Basic principles of STT-MRAM cell operation in memory arrays (2013, background): “Nowadays, most of the leading semiconductor industry companies have their own STT-MRAM programs [14–17].”