Exploring atomic defects in molybdenum disulphide monolayers

By Jinhua Hong, Zhixin Hu, Matt Probert, Kun Li, Danhui Lv, Xin’an Yang, Lin Gu, Nannan Mao, Qingliang Feng, Liming Xie and 8 more. Nature Communications, 2015

1,384 citations recorded by the source corpus.

Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment–theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 1013 cm−2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices. Imperfections can greatly alter a material’s properties. Here, the authors investigate the influence of point defects on the electronic structure, charge-carrier mobility and optical absorption of molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition.

Subfields: Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/e1c75e80f5c0368447680ee10600fc9ce610f55d

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Citations in the corpus

Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation (2016, methodology): “Although there is a good correlation between the ratio IXb /IX0 and e-beam dosage, one of the remaining concerns is that we are still unable to measure the exact number of defects in EBL processed WSe2, e.g. by using high resolution TEM, since TEM itself would provide more defects in WSe2 due to e-b”
2D semiconducting materials for electronic and optoelectronic applications: potential and challenge (2020, background): “However, it has been reported that the charged defects and inpurities in TMDCs degrade the carrier mobility [102].”
Hysteresis in the transfer characteristics of MoS2 transistors (2017, background): “Some groups have suggested that charge traps are located at the interface between the MoS2 and the SiO2 [23, 34–36], other studies have shown that the adsorption/desorption of gases on the exposed MoS2 surface by high vacuum or temperature annealing strongly affects the trapping process [37–42], whi”
Spectroscopic investigation of defects in two-dimensional materials (2016, background): “Similarly, the carrier mobility in TMDs devices is also limited by structural defects, which in turn restrict its electronic and optoelectronic performance [20].”