In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films
By Maciej Sawicki, Kaiyou Wang, K. Edmonds, R. Campion, C. Staddon, N. Farley, C. Foxon, E. Papis, E. Kamińska, A. Piotrowska and 2 more. 2004
163 citations recorded by the source corpus.
We show, by superconducting quantum interference device magnetometry, that in (Ga,Mn)As films the in-plane uniaxial magnetic easy axis is consistently associated with particular crystallographic directions and that it can be rotated from the $[\overline{1}10]$ direction to the [110] direction by low-temperature annealing. We show that this behavior is hole-density dependent and does not originate from surface anisotropy. The presence of uniaxial anisotropy as well its dependence on the hole concentration and temperature can be explained in terms of the $p\text{\penalty1000-\hskip0pt}d$ Zener model of the ferromagnetism assuming a small trigonal distortion.
View Paper: https://www.semanticscholar.org/paper/e1a06a5a9288c63bf608e2db2ed7322fbb534369
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Citations in the corpus
- Theory of ferromagnetic (III, Mn) V semiconductors (2006, background): “…p-type and ntype ferromagnetic (Ga,Mn)N, and of multiple ferromagnetic phases in one material all add to the complex phenomenology of these wide-gap DMSs (Arkun et al., 2004; Edmonds et al., 2004c, 2005b; Graf et al., 2002, 2003a; Hwang et al., 2005; Korotkov et al., 2001; Sawicki et al., 2005a).”
- Dilute ferromagnetic semiconductors: Physics and spintronic structures (2013, background): “…in accord with directions of spinreorientation transitions [1̄10] [110] observed as a function of either hole density or temperature in both high (Sawicki et al., 2005) and low hole concentration range, where gating was employed to vary hole concentrations (Chiba et al., 2008a; Sawicki et al.,…”
- Spin-dependent phenomena and device concepts explored in (Ga,Mn)As (2013, background): “Adapted from (Chernyshov et al., 2009). in (Ga,Mn)As epilayers (Fang et al., 2011; Sawicki et al., 2005; Zemen et al., 2009).”