Elucidating the Photoresponse of Ultrathin MoS2 Field-Effect Transistors by Scanning Photocurrent Microscopy

By Chung-Chiang Wu, Deep Jariwala, Vinod K. Sangwan, T. Marks, Mark C. Hersam, Lincoln J. Lauhon. 2013

218 citations recorded by the source corpus.

The mechanisms underlying the intrinsic photoresponse of few-layer (FL) molybdenum disulfide (MoS2) field-effect transistors are investigated via scanning photocurrent microscopy. We attribute the locally enhanced photocurrent to band-bending-assisted separation of photoexcited carriers at the MoS2/Au interface. The wavelength-dependent photocurrents of FL MoS2 transistors qualitatively follow the optical absorption spectra of MoS2, providing direct evidence of interband photoexcitation. Time and spectrally resolved photocurrent measurements at varying external electric fields and carrier concentrations establish that drift-diffusion currents dominate photothermoelectric currents in devices under bias.

Subfields: Artificial Intelligence, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/e15dc772ee09d6957b1c08a2264031e64548b8e8

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In Electrical and Electronic Engineering

1. Mark C. Hersam
2. T. Marks
3. Lincoln J. Lauhon
4. Vinod K. Sangwan

In Materials Chemistry

1. Mark C. Hersam
2. Vinod K. Sangwan
3. T. Marks
4. Deep Jariwala
5. Lincoln J. Lauhon

Citations in the corpus

• Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. (2014, background): “Subsequent studies on the bias dependence of spatially resolved photocurrents in MoS2 FETs suggested interband excitation as the dominant photocurrent mechanism under bias (Figure 8b,c), although the relative contributions from the two mechanisms at zero bias may vary between devices.(194) At large ”