Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition

By M. Chhowalla, K. Teo, C. Ducati, N. Rupesinghe, Gehan A. J. Amaratunga, Andrea C. Ferrari, D. Roy, John Robertson, William I. Milne. 2001

1,009 citations recorded by the source corpus.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/e13b8d02e6f52f64c6e10156b8d556a292a2c0fa

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In Materials Chemistry

1. William I. Milne
2. Huaqing Xie
3. Ken Ostrikov

Citations in the corpus

• Carbon nanotube growth mechanism switches from tip- to base-growth with decreasing catalyst particle size (2008, background): “[17] Chhowalla M, Teo KBK, Ducati C, Rupesinghe NL, Amaratunga GAJ, Ferrari AC, et al.”
• Influence of diameter in the Raman spectra of aligned multi-walled carbon nanotubes (2007, neutral): “[30].”
• Colloquium: Reactive plasmas as a versatile nanofabrication tool (2005, background): “In particular, it is commonly accepted that the normal direction of the sheath electric field is a reason for vertical alignment sgenerally speaking, normal to the substrate, depending on the sample orientationd of carbon nanotubes sBower et al., 2000; Chhowalla et al., 2001d.”