Low-threshold quantum dot lasers with 201 nm tuning range
By P. Varangis, H. Li, G. Liu, T. Newell, A. Stintz, B. Fuchs, K. Malloy, L. Lester. 2000
140 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/e11dc69fb4e8126705f0109ec22f2021e6e0aeb8
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Room-temperature operation of InAs quantum-dash lasers on InP [001] (2001, background): “tuning range at bias currents ten times lower than those required in QW lasers [8].”
- Semiconductor Nanostructures for Optoelectronic Applications (2004, background): “21)[29] or hexagonal pyramids (InGaN/GaN system; Figure 2.”
- Long-wavelength InP-based quantum-dash lasers (2002, background): “ITHIN the last couple of years, a large improvement in the device quality of quantum-dot lasers was achieved [1]‐[5] and specific quantum-dot properties like extremely low threshold current densities [6], reduced temperature sensitivity [7], [8], ultra wide gain bandwidth [ 9 ] and reduced chirp [10”