Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD

By F. Boschi, M. Bosi, T. Berzina, E. Buffagni, C. Ferrari, R. Fornari. 2016

181 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment

View Paper: https://www.semanticscholar.org/paper/e02e1eb3d7912fce52a4f67adf94d38950d4ee62

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Citations in the corpus

• Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques (2018, background): “This observation is consistent with a reported island growth mechanism for ε-Ga2O3 [30].”