On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

By H. Wong, H. Iwai. 2006

372 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/db94af03324c6584b0a5daece319c1e8d1f4c0d5

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. D. Fleetwood

Citations in the corpus

• Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling (2018, methodology): “icant [2], but these devices still show a tendency to trap more charge before and after irradiation than do devices with SiO2 gate oxides, particularly with the introduction of alternative channel devices in advanced development technologies envisioned for 10 nm and/or more highly scaled technology ”