Magnetic oxide semiconductors

By T. Fukumura, H. Toyosaki, Y. Yamada. 2005

170 citations recorded by the source corpus.

Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room temperature. We review in this paper recent progress of research on various magnetic oxide semiconductors. The magnetization, magneto-optical effect and magneto-transport such as the anomalous Hall effect are examined from the viewpoint of feasibility to evaluate the ferromagnetism. The ferromagnetism of Co-doped TiO2 and transition metal-doped ZnO is discussed.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/db21d00b9642b244b24ba202a91200f0a42d6f49

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. J. Masek
2. Jan Kucera
3. J. Sinova
4. Allan H. MacDonald
5. T. Jungwirth
6. T. Dietl

In Materials Chemistry

1. J. Sinova
2. T. Jungwirth
3. Allan H. MacDonald
4. J. Masek
5. Jan Kucera
6. T. Dietl
7. Ashvin Vishwanath
8. Q. Niu

Citations in the corpus

• Theory of ferromagnetic (III, Mn) V semiconductors (2006, background): “A detailed description of wide band gap and oxide DMSs can be found in (Fukumura et al., 2005, 2004; Graf et al., 2003b; Liu et al., 2005; Pearton et al., 2003).”