Stopping and Range of Ions in Matter SRIM-2003

By J. Ziegler. 2003

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Radiation-induced soft errors in advanced semiconductor technologies (2005, background): “LET converted into charge generation per linear distance for some ions in silicon (generated with IBM’s SRIM 2000) [9].”
Formation of compact solid water after ion irradiation at 15 K (2006, methodology): “Doses were estimated using the stopping power values (S in eV cm2 molecule−1) reported in Table 2 (Ziegler 2003).”
Surface modification of graphene and graphite by nitrogen plasma: Determination of chemical state alterations and assignments by quantitative X-ray photoelectron spectroscopy (2015, methodology): “The distribution of nitrogen beneath the surface can be estimated by the SRIM (Stopping and Range of Ions in Matter) program [30,31], which calculates the interaction of ions with matter based on Monte Carlo simulation method.”