Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

By B. Heying, R. Averbeck, L. Chen, E. Haus, H. Riechert, J. Speck. 2000

458 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Materials Chemistry, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/daf58e7f7b8dcdac2bf5abbd61e88977c67aef25

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Citations in the corpus

• III-nitride semiconductors for intersubband optoelectronics: a review (2013, background): “Smooth surfaces are generally achieved under a moderate Ga excess [40, 42, 46, 47], when the Ga excess arranges into a so-called laterally-contracted Ga bilayer, which consists of two Ga layers adsorbed on the Ga-terminated (0 0 0 1) GaN surface [40, 41, 47–49].”