A High-Performance Photovoltaic Module-Integrated Converter (MIC) Based on Cascaded Quasi-Z-Source Inverters (qZSI) Using eGaN FETs

By Yan Zhou, Liming Liu. IEEE transactions on power electronics, 2013

282 citations recorded by the source corpus.

This paper presents a single-phase grid-connected photovoltaic (PV) module-integrated converter (MIC) based on cascaded quasi-Z-source inverters (qZSI). In this system, each qZSI module serves as an MIC and is connected to one PV panel. Due to the cascaded structure and qZSI topology, the proposed MIC features low-voltage gain requirement, single-stage energy conversion, enhanced reliability, and good output power quality. Furthermore, the enhancement mode gallium nitride field-effect transistors (eGaN FETs) are employed in the qZSI module for efficiency improvement at higher switching frequency. It is found that the qZSI is very suitable for the application of eGaN FETs because of the shoot-through capability. Optimized module design is developed based on the derived qZSI ac equivalent model and power loss analytical model to achieve high efficiency and high power density. A design example of qZSI module is presented for a 250-W PV panel with 25-50-V output voltage. The simulation and experimental results prove the validity of the analytical models. The final module prototype design achieves up to 98.06% efficiency with 100-kHz switching frequency.

Subfields: Electrical and Electronic Engineering, Renewable Energy, Sustainability and the Environment

View Paper: https://www.semanticscholar.org/paper/dabec3ea1311b556f978d313a18b8573cd391065

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Citations in the corpus

Impedance-Source Networks for Electric Power Conversion Part I: A Topological Review (2015, background): “New power electronic devices, such as silicon carbide (SiC) and gallium nitride (GaN) devices, will definitely improve the performance of Z-source converters [24], [25].”
Package Parasitic Inductance Extraction and Simulation Model Development for the High-Voltage Cascode GaN HEMT (2014, background): “So far, the application of the enhancement-mode (E-mode) GaN transistor is limited due to critical driving issues as addressed in [5], [6], and [12].”
Impedance-Source Networks for Electric Power Conversion Part II: Review of Control and Modulation Techniques (2015, background): “A sawtooth-carrier-based SPWM is also presented in [91] for a single-phase module integrated inverter designed for a photovoltaic system.”