Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

By Q. Wahab, A. Ellison, A. Henry, E. Janzén, C. Hallin, J. Persio, R. Martinez. 2000

166 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/da7d71cccbb0672cea65e6a0e5d678c31580ba63

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1. P. Neudeck
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Citations in the corpus

• High-temperature electronics - a role for wide bandgap semiconductors? (2002, background): “For example, SiC power device blocking voltage is known to degrade as increasing device area encompasses more crystal defects [31], [32].”