Theory of magnetic anisotropy in III 1 − x Mn x V ferromagnets
By M. Abolfath, T. Jungwirth, J. Brum, Allan H. MacDonald. 2000
242 citations recorded by the source corpus.
We present a theory of magnetic anisotropy in ${\mathrm{III}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{V}$-diluted magnetic semiconductors with carrier-induced ferromagnetism. The theory is based on four- and six-band envelope function models for the valence-band holes and a mean-field treatment of their exchange interactions with ${\mathrm{Mn}}^{++}$ ions. We find that easy-axis reorientations can occur as a function of temperature, carrier density p, and strain. The magnetic anisotropy in strain-free samples is predicted to have a ${p}^{5/3}$ hole-density dependence at small p, a ${p}^{\ensuremath{-}1}$ dependence at large p, and remarkably large values at intermediate densities. An explicit expression, valid at small p, is given for the uniaxial contribution to the magnetic anisotropy due to unrelaxed epitaxial growth lattice-matching strains. Results of our numerical simulations are in agreement with magnetic anisotropy measurements on samples with both compressive and tensile strains. We predict that decreasing the hole density in current samples will lower the ferromagnetic transition temperature, but will increase the magnetic anisotropy energy and the coercivity.
Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/da496e0e3cf46506cb251644a9e1356ea67f858d
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Citations in the corpus
- Spin-dependent phenomena and device concepts explored in (Ga,Mn)As (2013, methodology): “…semiconductors were studied by magnetization, magneto-transport, magneto-optical, or ferromagnetic/spin-wave resonance (FMR/SWR) measurements (Abolfath et al., 2001; Bihler et al., 2009; Chiba et al., 2008; Cubukcu et al., 2010a,b; De Ranieri et al., 2013; Dietl et al., 2001; Goennenwein et…”
- Theory of ferromagnetic (III, Mn) V semiconductors (2006, methodology): “…al., 2001a; Sinova et al., 2004b) and predictions based on the microscopic values of these parameters for anisotropy fields, the characteristic size of domains, and the critical current in currentinduced magnetization switching (Abolfath et al., 2001a; Dietl et al., 2001a,a; Sinova et al., 2004b).”
- Dilute ferromagnetic semiconductors: Physics and spintronic structures (2013, methodology): “Following subsequent detail studies for (Ga,Mn)As epilayers (Abolfath et al., 2001; Dietl et al., 2001b), further theoretical analysis of anisotropy energy coefficients Ki and anisotropy fields Hi were carried out for the canonical (001) films (Zemen et al.”