Spin electronics—a review
By J. Gregg, I. Petej, E. Jouguelet, C. Dennis. 2002
238 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics
View Paper: https://www.semanticscholar.org/paper/da22f828f9749d677ed37b2ab02b99012c1befed
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
Citations in the corpus
- Theory of ferromagnetic (III, Mn) V semiconductors (2006, methodology): “The coercivities of individual DMS layers can be tuned via exchange-biasing to an antiferromagnet (Eid et al., 2004) which is a standard technique used in metal giant-magnetoresistance devices (Gregg et al., 2002).”
- Spin-dependent phenomena and device concepts explored in (Ga,Mn)As (2013, background): “…metal spintronics technologies reflect the large difference between resistivities in configurations with parallel and antiparallel polarizations of ferromagnetic layers in magnetic multilayers, or trilayers like spin-valves and magnetic tunnel junctions (Chappert et al., 2007; Gregg et al., 2002).”