Switching and filamentary conduction in non-volatile organic memories

By M. Cölle, M. Büchel, Dago M. De Leeuw. 2006

243 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/d95ece0fba63b29c105b4e60ce5c2c36e740b5e8

Citations in the corpus

• Flexible Resistive Switching Memory Device Based on Graphene Oxide (2010, unknown): “Many research groups have explored organic and inorganic materials to fabricate resistive switching elements for memory operation [1], [2].”