Flexible Resistive Switching Memory Device Based on Graphene Oxide

By S. Hong, J. Kim, S. Kim, Sung‐Yool Choi, B. Cho. IEEE Electron Device Letters, 2010

150 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/48dce5237f52ffea9ab8c2dbb8885a9c3c5be59f

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In Electrical and Electronic Engineering

1. Zhaoping Liu
2. Xufeng Zhou

Citations in the corpus

• Mechanism of nonvolatile resistive switching in graphene oxide thin films (2011, background): “[26] Hong SK, Kim JE, Kim SO, Choi SY, Cho BJ.”