Modeling for bipolar resistive memory switching in transition-metal oxides

By J. Hur, Myoung-Jae Lee, Chang Bum Lee, Young-Bae Kim, Changjung Kim. 2010

170 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/d948aa821c991ff17f14639e9c9adf7a5d99c9ec

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Giacomo Indiveri
2. B. Linares‐Barranco
3. T. Serrano‐Gotarredona
4. John Paul Strachan
5. Feng Miao
6. T. Prodromakis
7. Timothée Masquelier
8. Matthew D. Pickett

In Materials Chemistry

1. Feng Miao
2. Giacomo Indiveri
3. Alexander A. Balandin

Citations in the corpus

• State Dynamics and Modeling of Tantalum Oxide Memristors (2013, background): “The resulting device model constrains some of the underlying physical mechanisms for explaining the switching in tantalum oxide [15], [22], [26], and we”
• STDP and STDP variations with memristors for spiking neuromorphic learning systems (2013, background): “…phenomena like migration of oxygen ions (Nian et al., 2007) and vacancies (Yang et al., 2008), the lowering of Schottky barrier heights by trapped charge carriers at interfacial states (Hur et al., 2010), and the phase-change in some PCM (phase change materials) devices (Wuttig and Yamada, 2007).”