Defect energy levels in HfO2 high-dielectric-constant gate oxide

By K. Xiong, John Robertson, M. Gibson, S. Clark. 2005

445 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d8773a1fb6dc108d0ee780c091a28b541ae18a07

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In Electrical and Electronic Engineering

1. Stephan Kümmel
2. Leeor Kronik
3. R. Beranek

Citations in the corpus

• Orbital-dependent density functionals: Theory and applications (2008, background): “…e.g., Asahi et al., 2002; Robertson et al., 2006 and nitrides Stampfl et al., 2001 and has been reported to offer a significant improvement over semilocal functionals for the energy position of vacancy levels in high-dielectric-constant oxides see, e.g., Robertson et al., 2005; Xiong et al., 2005 .”