Graphene Spin Valve Devices
By Ernie W. Hill, A. Geim, K. Novoselov, Fredrik Schedin, P. Blake. IEEE transactions on magnetics, 2006
341 citations recorded by the source corpus.
Graphene-a single atomic layer of graphite-is a recently found two-dimensional (2-D) form of carbon, which exhibits high crystal quality and ballistic electron transport at room temperature. Soft magnetic NiFe electrodes have been used to inject polarized spins into graphene, and a 10% change in resistance has been observed as the electrodes switch from the parallel to the antiparallel state. This coupled with the fact that a field-effect electrode can modulate the conductivity of these graphene films makes them exciting potential candidates for spin electronic devices
Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/d8660715ae65699695e9f0323023f83ef42655e9
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Citations in the corpus
- The role of contact resistance in graphene field-effect devices (2017, background): “Several attempts to realize graphene based spin-transistor as well as spin valves have been reported [193-200], but the measured values of spin lifetimes always resulted significantly smaller than the prediction.”
- The rise of graphene. (2007, background): “Spin-valve and superconducting field-effect transistors are also obvious research targets, and recent reports describing a hysteretic magnetoresistanc”
- Graphene Sensors (2011, methodology): “using graphene [70] the spin scattering length has been de-”
- Emergence of magnetism in graphene materials and nanostructures (2010, background): “It is worth mentioning that spin-transport measurements in micrometerscale lateral graphene devices contacted by ferromagnetic electrodes have been carried out experimentally (Hill et al., 2006; Jozsa et al., 2008; Tombros et al., 2007, 2008).”