Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon

By Qiang Li, K. Ng, Kei May Lau. 2015

147 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d79bca4238e0767a17d07c4d79128ab76edb7c5b

How researchers see this paper

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In Biomedical Engineering

1. John E. Bowers

In Electrical and Electronic Engineering

1. Justin C. Norman
2. Weng W. Chow
3. John E. Bowers
4. Po Dong

In Materials Chemistry

1. John E. Bowers

Citations in the corpus

• 1.3 μm Submilliamp Threshold Quantum Dot Micro-lasers on Si (2017, unknown): “[16].”
• Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics (2017, unknown): “An improved method to grow coalesced GaAs thin ilms on patterned Si was demonstrated recently to produce GaAs-on-V-grooved Si (GoVS) templates [139].”
• How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches (2018, methodology): “Figure 11 shows a TEM investigation of GaAs modified from [155].”
• A Review of High-Performance Quantum Dot Lasers on Silicon (2019, methodology): “For the initial III-V/Si template we have interchangeably used GaP/Si, which is commercially available from NAsPIII/V, GmbH, and MOCVD grown GaAs on v-groove patterned Si [19].”