Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage
By H. Kambayashi, Y. Satoh, S. Ootomo, T. Kokawa, T. Nomura, S. Kato, T. P. Chow. 2010
138 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/d776b689e5b35530c9f594767be9ed3f618b853a
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Condensed Matter Physics
In Electrical and Electronic Engineering
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- A Survey of Wide Bandgap Power Semiconductor Devices (2014, methodology): “The resulting hybrid MOS-HEMT [64]–[66] incorporates the merits of both the MOS gate control and the high mobility of the 2DEG in the”
- Gallium nitride devices for power electronic applications (2013, background): “3 m cm2 have been reported by this group in 2010 [40].”