Thermally assisted MRAM

By I. Prejbeanu, M. Kerekes, R. Sousa, H. Sibuet, O. Redon, Bernard Dieny, J. Nozieres. 2007

197 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d768a35cd4458a4291abf2018416a609d5f88186

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. M. Chshiev
2. Weisheng Zhao
3. Jacques-Olivier Klein
4. Dafine Ravelosona
5. Yue Zhang
6. Zhaohao Wang
7. Alexander Driskill-Smith
8. Vladimir Nikitin

In Electrical and Electronic Engineering

1. Weisheng Zhao
2. Jacques-Olivier Klein
3. Dafine Ravelosona
4. Yue Zhang
5. M. Chshiev
6. Claude Chappert
7. Bernard Dieny
8. A. Slavin

In Materials Chemistry

1. M. Chshiev
2. Bernard Dieny
3. V. Joshi

Citations in the corpus

• Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (2017, background): “Thermal assistancewas also proposed as a solution to bypass the dilemma between memory retention and writability in MRAM (Dieny and Redon, 2001; Prejbeanu et al., 2007), and TAS-MRAM technology is currently developed by Crocus Technology.”
• Spintronics (2015, background): “To solve the dilemma between the write performance and retention and meanwhile continue the MRAM downsize scalability, a new concept named thermally assisted switching (TAS) was proposed [Li et al. 2004; Prejbeanu et al. 2007] which is the same as the basic concept used in heat-assisted magnetic rec”
• Basic principles of STT-MRAM cell operation in memory arrays (2013, background): “The anisotropy field of the cell can be approximated as [24]”