Tuning the electronic properties of semiconducting transition metal dichalcogenides by applying mechanical strains.

By P. Johari, V. Shenoy. ACS Nano, 2012

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Strain-induced direct–indirect bandgap transition and phonon modulation in monolayer WS2 (2015, background): “One remarkable change in the band structure induced by applying uniaxial tensile strain is the direct–indirect bandgap transition, which was theoretically predicted for other monolayer TMD materials [23, 25, 26, 28, 29].”
Innovation and discovery of graphene‐like materials via density‐functional theory computations (2015, background): “It was also found that single-layer MoS2, which is typically nonmagnetic, attains a net magnetic moment upon adsorption of 3d transition metals such as Co, Cr, Fe, Mn, Mo, Sc, Ti, V, and W, as well as group 4A elements such as Si and Ge.(52) The creation ofMoS2 triple vacancies gives rise to signifi”
Strained Bubbles in van der Waals Heterostructures as Local Emitters of Photoluminescence with Adjustable Wavelength (2019, background): “To understand the observed strong red-shift of the PL energy for the bubbles we recall that the band gap of atomically thin TMDCs, including monolayer MoS2, is strongly modified by strain (14,15,45) while the exciton binding energy remains unaffected (25,35), which results in a shift of the exciton ”