High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser

By Edik U. Rafailov, M. Cataluna, Wilson Sibbett, N. D. Il'inskaya, Y. Zadiranov, A. Zhukov, V. Ustinov, D. Livshits, A. R. Kovsh, N. Ledentsov. 2005

163 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d6d34d2d447b65c1ae9b17326a2df19de0486728

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. M. G. Thompson
2. Ian H. White

In Electrical and Electronic Engineering

1. Guang-Hua Duan
2. M. G. Thompson
3. Ian H. White

Citations in the corpus

• InGaAs Quantum-Dot Mode-Locked Laser Diodes (2009, background): “now been demonstrated with repetition rates ranging from 300 MHz to 240 GHz [6], [7], pulse durations ranging from tens of picoseconds to below 400 fs [8]–[10], with low noise [11], chirp-free pulse generation [8], [12]–[14], and peak powers beyond 2 W [8], [10].”
• Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m (2007, methodology): “3 μm using GaAs-based QD [17]–[19], and also at 1.”